Contactless Characterization of the Surface Property of the Si<sup>+</sup>-Implanted GaAs

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<jats:title>ABSTRACT</jats:title><jats:p>The surface recombination of GaAs which has a high carrier concentration layer (HCCL) formed by Si<jats:sup>+</jats:sup> implantation has been investigated using the reflectance microwave probe (RMP) method. The RMP method enables us to evaluate the surface property of GaAs contactlessly and easily. The experimental results of the samples which were implanted with doses ranging from 1.0×10<jats:sup>11</jats:sup> to 3.9×10<jats:sup>12</jats:sup>cm<jats:sup>-2</jats:sup> at an energy of lOOke V indicate that the effective surface recombination velocity decreases with dosage because of HCCL formed after the annealing. On the other hand, the results of the samples which were implanted with a dose of 3.9 × 10<jats:sup>12</jats:sup>cm<jats:sup>-2</jats:sup> at energies ranging from 30 to 180keV indicate that the effective surface recombination velocity increases with energy for energies larger than 50keV. We understood the reason by comparing with the numerical calculation results of an effective surface recombination velocity at a high-low junction interface.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 347 1994-01-01

    Springer Science and Business Media LLC

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