Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices
この論文をさがす
説明
<jats:title>Abstract</jats:title><jats:p>GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.</jats:p>
収録刊行物
-
- MRS Proceedings
-
MRS Proceedings 743 2002-01-01
Springer Science and Business Media LLC