Formation of silicon carbide layers by the ion beam technique and their electrical properties
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説明
Abstract β-type SiC layers were fabricated by high dose implantation of carbon ions into silicon with subsequent annealing. The effect of implanting energetic Si or P ions following the carbon ion implantation on the s-SiC formation behaviour was studied by means of infrared absorption spectroscopy. The results were compared with those obtained by implantation of Ar or Ne noble gas ions which caused a reduction in the s-SiC formation temperature. The electrical properties of the s-SiC layers formed by this ion beam technique were also evaluated.
収録刊行物
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- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 39 238-241, 1989-03-01
Elsevier BV
