Formation of silicon carbide layers by the ion beam technique and their electrical properties

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Abstract β-type SiC layers were fabricated by high dose implantation of carbon ions into silicon with subsequent annealing. The effect of implanting energetic Si or P ions following the carbon ion implantation on the s-SiC formation behaviour was studied by means of infrared absorption spectroscopy. The results were compared with those obtained by implantation of Ar or Ne noble gas ions which caused a reduction in the s-SiC formation temperature. The electrical properties of the s-SiC layers formed by this ion beam technique were also evaluated.

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