Terahertz emission and detection using two dimensional plasmons in semiconductor nano-heterostructures for sensing applications
説明
This paper reports on emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for sensing applications. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
収録刊行物
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- 2013 IEEE SENSORS
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2013 IEEE SENSORS 1-4, 2013-11-01
IEEE