Si-gate Transfer Mold FEAs for a study of the possibility of high-voltage switching
説明
In this work, Si-gate Transfer Mold FEAs have been fabricated and tested to demonstrate the possibility of applying vacuum microelectronics devices for high-voltage switching. As a result, high voltage of up to 2 kV have been turned on and off using the FEAs.
収録刊行物
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- Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382)
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Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382) 144-145, 2002-11-27
IEEE
