A novel test structure for measuring the threshold voltage variance in MOSFETs
説明
A new threshold voltage variation monitoring circuit is introduced which utilizes a stochastic comparator group. It occupies minimal area, only requires a DC input stimulus voltage, and performs digital DC measurement. Traditional methods have required the measurement of the variation in a ring oscillator frequency. Our method circumvents the need for AC measurements, and accelerates the accumulation of data by incorporating stochastic properties into the circuit.
収録刊行物
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- 2013 IEEE International Test Conference (ITC)
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2013 IEEE International Test Conference (ITC) 1-8, 2013-09-01
IEEE
