An experimental and numerical study of the composition distribution of InGaAsP quaternary materials in a horizontal MOCVD reactor
説明
A model was developed that enabled the simulation of composition and growth rate distributions of InGaAsP layers in a horizontal reactor. The model is based on kinetic data assessed by in-situ ellipsometry and FTIR spectrometry.
収録刊行物
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- Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)
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Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) 368-371, 2002-11-07
IEEE