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Characterization and qualification of the Jeol JBX9000-MVII e-beam writer for the 90nm node and its integration in a photomask manufacturing line
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Description
The advanced Jeol JBX9000MVII 50kV electron-beam lithography system has been successfully installed at DNP Photomask Europe and timely qualified for the 90nm technology node. The overall performances of this writing tool have thoroughly been assessed on positive and negative tone chemically amplified resists (CARs), fully exploiting the advanced proximity effect correction (PEC) capabilities of the system and carefully optimizing the overall process. The reported results show the machine capabilities in terms of global and local pattern placement and CD accuracy, CD linearity, pattern fidelity, along with data on some of the most demanding model-based OPC validation patterns. Details on process characterization and tuning effectiveness on resist and chrome are shown, including the PEC approach. Based on the stringent metrology correlation achieved with DNP Japan manufacturing site, the data show a one-to-one compatibility with the sister tool installed there, even on the most critical OPC structures. Consequently, the complete product interchangeability between the two manufacturing sites has been achieved.
Journal
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- SPIE Proceedings
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SPIE Proceedings 5992 59924W-, 2005-10-21
SPIE
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Details 詳細情報について
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- CRID
- 1872835442849945856
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- ISSN
- 0277786X
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- Data Source
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- OpenAIRE