Optical coupling between SiO<inf>x</inf>N<inf>y</inf> waveguide and Ge mesa structures for bulk-Si photonics platform
説明
We successfully confirmed controllable optical coupling between a germanium mesa on a bulk-silicon wafer and a low-loss silicon oxynitride waveguide. This coupling structure can be adopted for constructing various active devices on a CMOS-process-friendly bulk-silicon photonics platform.
収録刊行物
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- 2015 IEEE 12th International Conference on Group IV Photonics (GFP)
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2015 IEEE 12th International Conference on Group IV Photonics (GFP) 122-123, 2015-08-01
IEEE