Cr Atom Alignment in Cr-Delta-Doped GaN

DOI

Search this article

Description

Structural properties and Cr atom alignments in Cr‐delta doped GaN grown by molecular beam epitaxy are studied with transmission electron microscopy and X‐ray absorption fine structure (XAFS) measurements. It is found that the environment around Cr atoms in delta‐doped samples is dramatically changed under various growth conditions. The XAFS analysis of these synthesized layers suggests that new Cr‐related complexes are grown.

Journal

Details 詳細情報について

Report a problem

Back to top