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説明
The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.
収録刊行物
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- IEEE Transactions on Nuclear Science
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IEEE Transactions on Nuclear Science 59 749-754, 2011-09-01
Institute of Electrical and Electronics Engineers (IEEE)