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High speed and precise ablation etching of wide band gap GaN semiconductor using high-intensity femtosecond laser
Description
We report on the demonstration of precise and high-speed ablation etching of GaN films using high-intensity femtosecond laser at 800 nm. This ablation etching process is based on the two-photon absorption process of the GaN. It is found that there is no Ga layer formation on the ablated surface of the GaN.
Journal
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- LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080)
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LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080) 2 561-562, 2002-11-08
IEEE