Investigation of surface potential distributions of phosphorus-doped n-BaSi<sub>2</sub>thin-films by kelvin probe force microscopy
説明
We investigated the surface potential distributions around grain boundaries (GBs) in phosphorus (P)-doped n-BaSi2 thin-films by Kelvin probe force microscopy (KFM) and the crystal planes constituting GBs by transmission electron microscopy (TEM). By KFM measurements, it was found that the GBs in P-doped n-BaSi2 are different from those in undoped BaSi2; undoped n-BaSi2 has a downward band bending around the GBs with barrier heights of approximately 30 meV. In contrast, P-doped n-BaSi2 has an upward band bending with barrier heights of approximately 15 meV. TEM observation revealed that most of the GBs in P-doped BaSi2 are composed of BaSi2 (011)/(0-11) planes. This result is the same as that in undoped BaSi2.
収録刊行物
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- Proc. Int. Conf. and Summer School on Advanced Silicide Technology 2014
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Proc. Int. Conf. and Summer School on Advanced Silicide Technology 2014 011403-, 2015-01-01
Japan Society of Applied Physics