Mirror polishing of InP wafer surfaces with NaOCl-citric acid
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説明
Abstract This paper describes new polishing solutions using NaOCl and citric acid for polishing InP wafers. The NaOCl solution and citric acid in water are separately supplied and mixed on a polishing pad. The liberated chlorine in the mixed solution etches the InP wafer surfaces. Mirror polished InP wafers with good surface roughness are prepared with an optimized solution; Rmax is 0.8 nm and Ra is 0.1 nm. No damage is observed on the mirror-finish surfaces of the InP wafers.
収録刊行物
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- Applied Surface Science
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Applied Surface Science 92 147-150, 1996-02-01
Elsevier BV
