A novel IR monitoring system for organic contaminants on 300-mm silicon wafer surfaces
説明
A new infrared (IR) monitoring system has been developed for the detection of organic contaminants on 300 mm silicon wafer surfaces with non-contact, non-destructive, high sensitivity, and real-time capability. IR propagates through the wafer in which the light is internally reflected about 600 times. This enables us to detect an organic contamination on the wafer surface with a sensitivity of below 1/spl times/10/sup 11/ carbon atoms/cm/sup 2/. We demonstrate its performance by monitoring the decomposing process of dioctyl-phthalate (DOP) on the wafer surface by ultraviolet (UV)/ozone cleaning.
収録刊行物
-
- 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314)
-
1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314) 457-460, 2003-01-20
IEEE