Analysis of Radical Reaction on Growing Surface During Si Epitaxy by Photo-Cvd
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説明
<jats:title>ABSTRACT</jats:title><jats:p>The growth mechanism of Si film at low temperature on Si(100) by photo-CVD was theoretically analyzed by using reaction models both in the gas phase and on the growing surface. We introduced three surface reactions; the growth of Si from SiH<jats:sub>3</jats:sub> radicals, the dangling bond termination by atomic hydrogen and the abstraction of bonding hydrogen by SiH<jats:sub>3</jats:sub> radicals. We assumed that the film structure is determined by the hydrogen surface coverage ratio “ø” and the parameters of the surface reaction model were determined from the experimental results. The theoretical analysis explained well the experimental data on the growth rate.</jats:p>
収録刊行物
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- MRS Proceedings
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MRS Proceedings 507 1998-01-01
Springer Science and Business Media LLC
