Properties of hetero-structured SiCX films deposited by hot-wire CVD using SiH3CH3 as carbon source

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Abstract The hetero-structured SiC X films have been deposited by hot-wire CVD using SiH 3 CH 3 as the carbon source gas. Although the carbon source gas ratio and filament temperature in the deposition using SiH 3 CH 3 were smaller than those using C 2 H 6 , the carbon content in the sample deposited using SiH 3 CH 3 was similar to that deposited using C 2 H 6 . The optical energy gap in the sample deposited using SiH 3 CH 3 was larger than that deposited using C 2 H 6 . The sample deposited using SiH 3 CH 3 under optimized condition showed a wide optical energy gap of 1.99 eV and a large dark conductivity of 15.1 S/cm. The p-type sample deposited using SiH 3 CH 3 under the optimized condition has been used as a window layer material in p–i–n a-Si:H based solar cells.

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