Soft error immune latch design for 20 nm bulk CMOS
説明
This paper discusses soft error immune latch (SEILA) design aiming to prevent soft errors originating from charge collection to multiple nodes. We first designed 28 nm SEILA with double height cell (DHC) and evaluated its SEU rate through neutron irradiation test. The SEU rate is at the same level with 65 nm DHC-SEILA. Next, for enhancing the soft error mitigation efficiency, we designed SEILA with triple height cell (THC) in 20 nm. The 20 nm THC-SEILA achieves 14 times lower SEU rate than 28 nm DHC-SEILA. The area overhead compared to a normal latch is 140 % in the 20 nm THC-SEILA.
収録刊行物
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- 2015 IEEE International Reliability Physics Symposium
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2015 IEEE International Reliability Physics Symposium SE.4.1-SE.4.6, 2015-04-01
IEEE
