Stress Effect on Oxidation Kinetics of Silicon with Different Surface Orientations

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<jats:title>ABSTRACT</jats:title><jats:p>Thermal oxidation of different crystallographic surface orientations of Si reveals a complex rate behavior not only in the initial stage but also in sequential two step oxidation with high temperature annealing where enhanced oxidation is observed as well. These phenomena are explained by the reduction of oxygen solubility in SiO<jats:sub>2</jats:sub> due to stress in the SiO<jats:sub>2</jats:sub> film, which has been confirmed by isotope labeling oxidation with SIMS analysis.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 239 1991-01-01

    Springer Science and Business Media LLC

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