LF-band noise in MOSFET in low-power operation
この論文をさがす
説明
Noise performance of a commercial MOSFET was evaluated for the amplifier application in LF-band. The level of 1/f noise referred to the gate was about -126 dbV/Hz at 1 Hz and was proportional to f -0.9 . At 100 kHz noise was white and was equivalent to the thermal noise from 1 kΩ and 100 kΩ at the drain current of 100 μA and 1 μA, respectively. 2SK1771 is acceptable as the amplifying device connected to a tuning circuit whose resonant impedance is more than the values stated above.
収録刊行物
-
- SPIE Proceedings
-
SPIE Proceedings 5470 538-, 2004-05-25
SPIE