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Process induced damage on RFCMOS
Description
We have investigated the correlation between process induced damage and RF analog characteristics. Vth matching, fmax, and NFmin were analyzed using mass data. It was found that the redistribution of channel profile due to the damage induced by ion implantation at the gate edge affects the spread of fmax and NFmin. This tendency was not apparent in the spread of fT.
Journal
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- International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
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International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 965-968, 2002-11-28
IEEE