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Piezoelectric properties of PZT thick film on Si prepared by an interfacial polymerization method
Description
Pb(Zr/sub 0.53/Ti/sub 0.4/)O/sub 3/ (PZT) films were prepared by a new sol-gel process using an interfacial polymerization technique. The interfacial polymerization process is that an alkoxide precursor solution is poured on the surface of water in a container to form a gel film at the interface between the two immiscible liquids. The precursor solution was prepared by adding PZT alkoxide solution, PZT powders coated with Pb/sub 5/Ge/sub 3/O/sub 11/ (PG), and a surfactant into hexane solvent. After the polymerization at the interface, the gel films were gently placed on a silicon substrate by draining the water in the container. The gel films containing PZT powders were sintered at 950/spl deg/C for 10 min to obtain crystallized PZT films. The remanent polarization of a PZT thick film was 33.1 /spl mu/C/cm/sup 2/. The piezoelectric d/sub 33/ constant measured with a Mach-Zehnder interferometer was 225 pm/V and was independent of frequency from 0.2 to 3 kHz.
Journal
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- ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076)
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ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics (IEEE Cat. No.00CH37076) 1 89-92, 2002-11-11
IEEE
