Reliability and performance of submicron LDD NMOSFET's with buried As n<sup>-</sup>impurity profiles

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The reliability and performance of submicron LDD NMOSFET's with retrograde Arsenic impurity profiles in the n-region were investigated. These structures were compared to devices with conventional As drains and phosphorus-implanted (P+) LDD's. Reduced substrate current was expected from 2D simulation and was confirmed experimentally. Lifetime under DC stress was improved by a factor of 15 over that observed for LDD devices. Transconductance was 93% of a conventional NMOSFET and 5% greater than a LDD FET having a P+implant of 4 \times 10^{13} cm-2, CMOS ring oscillator stage delay was equal to or better than the delay for LDD and conventional NMOSFET's and depicted a tradeoff between g m and gate-drain overlap capacitance C dg . Short channel effects were evaluated for L eff down to 0.45 µm and found to be similar to standard LDD designs.

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