説明
Self-assembled InAs/GaAs quantum dots (QD) incorporated in a GaAs/AlAs Fabry-Perot cavity have been employed as an optical nonlinear source for vertical-reflection type switches. Switching times of 32∼80 ps have been achieved in this novel structure. All-optical switching using excited QD states shows better performance due to fast carrier relaxation between QD energy states. These results demonstrate potential application of QD materials in ultra-fast all-optical switching devices.
収録刊行物
-
- 2009 IEEE International Conference on Indium Phosphide & Related Materials
-
2009 IEEE International Conference on Indium Phosphide & Related Materials 406-407, 2009-05-01
IEEE