Void Elongation Phenomena Observed in Polycrystalline Cu Interconnects at a High Current Density Stressing Conditions

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<jats:title>ABSTRACT</jats:title><jats:p>Formation and morphological change of voids induced by electromigration in polycrystalline Cu interconnects on TiN have been investigated at various current density conditions at elevated temperatures. At first voids were formed at grain boundaries, then they grew further to elongate in the electric field direction. Void elongation parameter (a ratio of void diameters in longitudinal to lateral directions to the electric field) was 2.53 when the current density was 9×10<jats:sup>6</jats:sup>A/cm<jats:sup>2</jats:sup>, while it was 1.31 when the current density was 3×10<jats:sup>6</jats:sup>A/cm<jats:sup>2</jats:sup>at 400°C, 50h. Occurrence of void elongation is enhanced with increase in current density, and its relationship to grain boundaries are discussed by FIB-SIM image analysis.</jats:p>

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  • MRS Proceedings

    MRS Proceedings 473 1997-01-01

    Springer Science and Business Media LLC

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