Silver film etching using halogen gas plasma

<jats:p>Silver (Ag) film etching was studied with a focus on suppressing the surface roughness induced by Cl2 and CF4 plasmas. After Cl2 plasma etching, roughening of the Ag surface was observed. From in situ x-ray photoelectron spectroscopy and atomic force microscopy analyses using a plasma beam system, the Ag surface was roughened with AgCl formation after Cl2 plasma treatment before exposure to air. In capacitively coupled Cl2 plasma, it seemed that many voids were formed on the Ag surface at a high bias power and cathode temperature. This was considered to be characteristic of agglomeration. In contrast, severe surface roughness was not observed after CF4 plasma etching, even at a high bias power and cathode temperature. Secondary ion mass spectrometry analysis showed high chlorine accumulation near the Ag film surface after Cl2 plasma etching. Possible agglomeration of the Ag film during Cl2 plasma etching was volume expansion caused by chlorine accumulation assumed to enhance the compressive stress of the Ag film, and this resulted in increased boundary grooving and, finally, agglomeration. In contrast, fluorine accumulation was unlikely during CF4 plasma etching, resulting in less Ag film stress, which suppressed grain boundary grooving and agglomeration.</jats:p>