SRAM Variability and Supply Voltage Scaling Challenges
説明
We have developed a methodology for SRAM cell design that unifies all the major design criterion - cell stability, write margin, read speed and leakage into a single metric. This metric has been used to design a 65nm cell while accounting for challenges posed by increased Vt variability, Vcc scaling and NBTI drift. The impact of NBTI drift on the periphery of a high speed SRAM has been simulated and measured
収録刊行物
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- 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual
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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual 23-28, 2007-04-01
IEEE