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Mid-gap electron traps (EL2 family) in GaAs
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Description
Abstract Peculiar properties of mid-gap levels in GaAs (EL2 family) are summarized, and to explain these properties a new model for EL2 family, arsenic aggregates, is presented and discussed.
Journal
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- Microelectronic Engineering
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Microelectronic Engineering 2 137-143, 1984-10-01
Elsevier BV
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Details 詳細情報について
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- CRID
- 1874242817549751552
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- ISSN
- 01679317
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- Data Source
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- OpenAIRE
