ZnO growth using remote plasma metalorganic chemical vapor deposition
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説明
ZnO layers were grown on a-plane sapphire by remote plasma metalorganic chemical vapor deposition (MOCVD) using oxygen plasma and Diethyl Zinc (DEZn) as a source material with hydrogen carrier. Oxygen radicals and OH radicals, which were observed by optical spectroscopy, promoted the film growth rate and suppressed the deep level emission in the photoluminescence (PL) spectra. To prove the effect of O and OH radicals, hydrogen plasma and helium plasma techniques were used in film growth. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
収録刊行物
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- physica status solidi (c)
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physica status solidi (c) 1 880-883, 2004-03-01
Wiley
