- 【Updated on May 12, 2025】 Integration of CiNii Dissertations and CiNii Books into CiNii Research
- Trial version of CiNii Research Knowledge Graph Search feature is available on CiNii Labs
- Suspension and deletion of data provided by Nikkei BP
- Regarding the recording of “Research Data” and “Evidence Data”
Growth and orientation of GaN epilayers on NdGaO/sub 3/ by hydride vapor phase epitaxy
Description
Growth characteristics of GaN on NdGaO/sub 3/ [011] and (101) substrates by hydride vapor phase epitaxy are investigated. The epitaxial relationship is found to be GaN(0001)/NdGaO/sub 3/ [011] with GaN [10-10]//NdGaO/sub 3/ [100] for NdGaO/sub 3/ [011] and GaN(11-24)/NdGaO/sub 3/[101] with GaN[11-2-4]//NdGaO/sub 3/ [10-1] for the NdGaO/sub 3/ [101]. When the GaN is directly grown on NdGaO3/sub /substrates around 1000/spl deg/C, no deposits of GaN are obtained due to the reduction of the NdGaO3/sub s/ substrate by the presence of NH/sub 3/ at high temperature. In order to avoid the substrate reduction, low-temperature grown GaN is effective as the protective layer.
Journal
-
- Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
-
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) 33-36, 2002-11-27
IEEE
