Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots
説明
We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In 0.22 Ga 0.78 As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.
収録刊行物
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- CLEO: 2015
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CLEO: 2015 SM2F.1-, 2015-01-01
OSA
