[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited)

  • NAKAJIMA Anri
    Hiroshima University, Research Center for Nanodevices and Systems, Associate Professor

Bibliographic Information

Title
Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited)
Author
Anri Nakajima

Journal

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Details

  • CRID
    1010000781759534728
  • Article Type
    journal article
  • Data Source
    • KAKEN

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