Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
Bibliographic Information
- Title
- Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
- Author
- Ichirou Takahashi, Tadahiro Ohmi, et al.
Journal
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- Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
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Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 554-555, 2006
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Details 詳細情報について
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- CRID
- 1010000781948824836
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- Article Type
- journal article
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- Data Source
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- KAKEN