Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
書誌事項
- タイトル
- Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
- 著者
- Ichirou Takahashi, Tadahiro Ohmi, et al.
収録刊行物
-
- Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
-
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 554-555, 2006