Electrical and Structural Evaluations of Ultrathin SiGe and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation
書誌事項
- タイトル
- Electrical and Structural Evaluations of Ultrathin SiGe and Ge-on-insulator Fabricated Using Ge Condensation by Dry Oxidation
- 著者
- H. Yang, D. Wang, H. Gao, K. Hirayama, K. Ikeda, S. Hata, H. Nakashima, H. Nakashima
収録刊行物
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- Extended Abstracts of the 2008 International ronference on Solid State Devices and Materials
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Extended Abstracts of the 2008 International ronference on Solid State Devices and Materials 438-439, 2008
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詳細情報
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- CRID
- 1010000782026200600
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- 資料種別
- journal article
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- データソース種別
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- KAKEN