Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates
書誌事項
- タイトル
- Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates
- 著者
- H.Ishikawa, K.Shimanaka
収録刊行物
-
- J.Crystal Growth Vol.315
-
J.Crystal Growth Vol.315 196-199, 2011