High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs
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- 角嶋 邦之
- 東京工業大学
書誌事項
- タイトル
- High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 55 2017