Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
Bibliographic Information
- Title
- Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
- Author
- Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita and Takeshi Ohshima
Journal
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- Materials Science Forum
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Materials Science Forum 778-780 440-443, 2014
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Details 詳細情報について
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- CRID
- 1010000782438033540
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- Article Type
- journal article
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- Data Source
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- KAKEN