Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
書誌事項
- タイトル
- Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
- 著者
- Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita and Takeshi Ohshima
収録刊行物
-
- Materials Science Forum
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Materials Science Forum 778-780 440-443, 2014