Dose designing and fabrication of 4H-SiC double RESURF MOSFETs
Bibliographic Information
- Title
- Dose designing and fabrication of 4H-SiC double RESURF MOSFETs
- Author
- T.Kimoto 他
Journal
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- Proc. 18th Int. Symp. On Power Semiconductor Devices
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Proc. 18th Int. Symp. On Power Semiconductor Devices 273-276, 2006
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Details 詳細情報について
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- CRID
- 1010000782443214366
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- Article Type
- journal article
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- Data Source
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- KAKEN