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Electron cyclotron resonance reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and 02 with constant Ar flow
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- NAKANO Yoshiaki
- The University of Tokyo, Research Center for Advanced Science and Technology, Professor
Bibliographic Information
- Title
- Electron cyclotron resonance reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and 02 with constant Ar flow
- Author
- Tomoyoshi Ide, Goh Segami, Nobuo Haneji, Taro Arakawa, Kunio Tada, Yukihiro ShimogaM, Yoshiaki Nakano
Journal
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- Extended Abstracts of the 22nd Electronic Materials Symposium, Biwako, Shiga, July 2-4 B10
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Extended Abstracts of the 22nd Electronic Materials Symposium, Biwako, Shiga, July 2-4 B10 27-30, 2003
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Details 詳細情報について
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- CRID
- 1010282256753485703
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- Article Type
- journal article
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- Data Source
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- KAKEN