Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
Bibliographic Information
- Title
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Author
- K.Takemoto, Y.Kumagai, H.Murakami, A.Koukitu
Journal
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- Japanese Journal of Applied Physics Vol.44 No.50
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Japanese Journal of Applied Physics Vol.44 No.50 2005
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Details 詳細情報について
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- CRID
- 1010282256927408387
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- Article Type
- journal article
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- Data Source
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- KAKEN