Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
書誌事項
- タイトル
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- 著者
- K.Takemoto, Y.Kumagai, H.Murakami, A.Koukitu
収録刊行物
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- Japanese Journal of Applied Physics Vol.44 No.50
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Japanese Journal of Applied Physics Vol.44 No.50 2005