High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact
Bibliographic Information
- Title
- High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact
- Author
- T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
Journal
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- Japanese Journal of Applied Physics Vol.45
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Japanese Journal of Applied Physics Vol.45 2006
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Details
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- CRID
- 1010282256965870852
-
- Article Type
- journal article
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- Data Source
-
- KAKEN
