High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact
書誌事項
- タイトル
- High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact
- 著者
- T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
収録刊行物
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- Japanese Journal of Applied Physics Vol.45
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Japanese Journal of Applied Physics Vol.45 2006
