High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact

Bibliographic Information

Title
High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact
Author
T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki

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Details 詳細情報について

  • CRID
    1010282256965870852
  • Article Type
    journal article
  • Data Source
    • KAKEN

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