Enhancement of memory retention time of metal/ferroelectric/insulator/semiconductor structure by using fast annealing and nitrogen radicalirradiation
書誌事項
- タイトル
- Enhancement of memory retention time of metal/ferroelectric/insulator/semiconductor structure by using fast annealing and nitrogen radicalirradiation
- 著者
- Van Hai, S.Nakashima, M.OkuyamaLe
収録刊行物
-
- Journal of the Korean Physical Society 55
-
Journal of the Korean Physical Society 55 884-887, 2009