Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
書誌事項
- タイトル
- Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
- 著者
- N., Umezawa・K., Shiraishi・S., Sugino, et. al.
収録刊行物
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- APPLIED PHYSICS LETTERS 91
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APPLIED PHYSICS LETTERS 91 2007
