Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Bibliographic Information

Title
Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation
Author
N., Umezawa・K., Shiraishi・S., Sugino, et. al.

Journal

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Details

  • CRID
    1010282257417325972
  • Article Type
    journal article
  • Data Source
    • KAKEN

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