Room-Temperature Epitaxial Growth of High Quality AIN on SiC by Pulsed Sputtering Deposition
Bibliographic Information
- Title
- Room-Temperature Epitaxial Growth of High Quality AIN on SiC by Pulsed Sputtering Deposition
- Author
- K. Sato
Journal
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- Appl. Phys. Exp 2
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Appl. Phys. Exp 2 11003-, 2009
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Details
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- CRID
- 1010282257417758491
-
- Article Type
- journal article
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- Data Source
-
- KAKEN