In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
Bibliographic Information
- Title
- In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
- Author
- T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake
Journal
-
- ECS Trans. 25
-
ECS Trans. 25 309-315, 2009
