In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
書誌事項
- タイトル
- In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
- 著者
- T.Ohnishi, Y.Kirihata, H.Ohmi, H.Kakiuchi, K.Yasutake
収録刊行物
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- ECS Trans. 25
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ECS Trans. 25 309-315, 2009