Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
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- 星井 拓也
- 東京大学
Bibliographic Information
- Title
- Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
- Author
- Takuya Hoshii
Journal
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- Applied Physics Letters
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Applied Physics Letters 97 132102-, 2010
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Details 詳細情報について
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- CRID
- 1010282257459106944
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- Article Type
- journal article
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- Data Source
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- KAKEN